Current Staff
Giuseppe Bertuccio
Giuseppe Bertuccio was born in 1962, received the Master degree in Nuclear Engineering at Politecnico di Milano (PoliMi) and since 1987 he joined the research group of professor Emilio Gatti at PoliMI, contributing to the pioneering development of electronic devices on the high resistivity silicon suitable for the integration with radiation detectors. Since 1990 he has been a researcher and since 1998 professor at the Department of Electronics, Information and Bioengineering at PoliMi. In 1991 he was visiting researcher at Brookhaven National Laboratory (BNL, New York – USA) working on X-ray detectors and associated electronics. He contributed to the development of the Silicon Drift Detectors and associated front-end electronics within a research collaboration between PoliMi, BNL and Max Planck Institute (Munich, D). In 1993 he was visiting researcher at Canberra Industries (Meriden, CT – USA) to collaborate in the R&D of a front-end for high purity germanium detectors. In 1993-94, he collaborated with the University of Freiburg and the Fraunhofer Institute for Solid State Physics (Freiburg, Germany) on the design of the first charge amplifier in GaAs technology using High Electron Mobility Transistors. He has also collaborated with the University of Modena, Institute for Solid State Physics (Julich, D), Alenia-Marconi Systems (Rome, I), and ESA-ESTEC (Noordwijk, Netherland) for the study and development of X-ray detectors based on Gallium Arsenide. His present research fields are in low-noise and low-power mixed-signals Application-Specific Integrated Circuits (ASICs) for signal processing of radiation detectors and in Silicon and compound semiconductor detectors (SiC, GaAs, CdTe, CdZnTe) for ionizing radiation spectroscopy and imaging. He has been scientific responsible for Politecnico di Milano of several research projects on radiation detectors and associated electronics funded by the National Research Council (CNR), the Italian Institute for Nuclear Physics (INFN), the Italian Space Agency (ASI), the Italian Institute of Astrophysics (INAF), Lombardy region and by the Ministry of University and Scientific and Technological Research.
Filippo Mele
Filippo Mele was born in Rome in 1991. He received the M.Sc. in Electronics Engineering at “Sapienza” University of Rome in 2015. Since 2017 he joined the SDIC-Lab, and in 2021 completed the Ph.D. in Information Technology cum laude at Politecnico di Milano, with a thesis on “Low-Noise Low-Power Integrated Circuits for High-Resolution X and Gamma Semiconductor Detectors” under the supervision of Prof. G. Bertuccio and Prof. A. Vacchi. From 2015 to 2017 he was Analog Mixed-Signal IC Designer at Infineon Technologies, working on SMPS modules for Advanced Driving Assistant System (ADAS) applications. In 2022 he was visiting scientist at the Stanford Linear Accelerator National Laboratory (SLAC, Stanford University) working on the design of new generation readout ICs for Linac Coherent Light Source (LCLS-II) in the Technology Innovation Directorate (TID). From 2022 he is a Research Associate (RTD-A) at the SDIC-Lab in Politecnico di Milano. His current research interests include, ultra-low noise CMOS charge sensitive amplifiers for advanced light sources, low-power analog/mixed-signal nuclear microelectronic circuits for astrophysics experiments and room temperature semiconductor radiation detectors (CdTe, CZT).
PhD Student
Floor: T
Office: 004b
Ph.: 7340
Jacopo Quercia
Jacopo Quercia was born in Milan in 1995. He received the M.Sc. degree in Electronics Engineering from Politecnico di Milano in 2020, with an MSc thesis on Mixed-signal CMOS analog design for Radiation Detectors. He is currently enrolled as a Ph.D. student in Information Technology at Politecnico di Milano. His research project in collaboration with Xnext s.r.l., a leading company in advanced real-time contaminants and defects controls, focuses on front end electronics for high rate (<10 Mcount/s) and high-resolution X-ray spectroscopic imaging.
PhD Student
Floor: T
Office: 004b
Iurii Eremeev
Iurii Eremeev was born in Russia in 1997. He received the B.Sc. degree in nanotechnology and the M.Sc. in nanoelectronics. Iurii worked in the field of material science of nanostructures at Ioffe Institute, Peter the Great Saint-Petersburg Polytechnic University, Saint-Petersburg Academic University. In this period, the main areas of work were the growth of silicon carbide films on silicon, spinel structures and FEM modeling of thin film properties. He began working on the development of compound semiconductor radiation detectors and met Professor Bertuccio. Currently, Iurii is a Ph.D. student at the SDIC-Lab focusing on noise characterization of low-gain avalanche diodes.
Former Staff
Senior Analog IC Designer
Currently at:
Infineon Technologies AG
Graz, Austria
Irisa Dedolli
Irisa Dedolli was born in Albania in 1996. She received the M.Sc. degree in Electronics Engineering from Politecnico di Milano in 2020, with a MSc thesis on a Digital IC Processing Unit for MEMS Gyroscopes. From November 2020 till December 2023, she was Ph.D. student in Information Technology with the Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano. Her research focused on the development of CMOS mixed-signal ASICs for radiation detectors devoted to future space missions, in particular, projects related to ADAM (Advanced Detector for X-ray Astronomy Missions), eXTP, HERMES and THESEUS. She is currently a Senior Analog IC Designer at Infineon Technology in Graz, Austria.